PART |
Description |
Maker |
ZL50112GAG2 ZL5011008 |
128, 256, 512 and 1024 Channel CESoP Processors
|
Zarlink Semiconductor Inc
|
AT24C01A |
2-wire Automotive Serial EEPROM 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) 16K (2048 x 8)
|
Atmel Corporation
|
TC9WMB2FK TC9WMB1FK |
1024-Bit (128 x 8 Bit) / 2048-Bit (256 x 8 Bit) 2-Wire Serial E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
TC9WMB1FK |
1024-Bit (128 x 8 Bit) / 2048-Bit (256 x 8 Bit) 2-Wire Serial E2PROM
|
Toshiba Semiconductor
|
S29PL129N70FFW002 S29PL127N65GFIW02 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
ST93C57B1013TR ST93C57B1TR ST93C57B3013TR ST93C57B |
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM 2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM 2K 128 x 1656 × 8 MICROWIRE的串行EEPROM 2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM
|
STMicroelectronics N.V. 意法半导 MICROCHIP[Microchip Technology] STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
|
IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位,每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM,具有可编程写保护每个字节。(1024 × 8位,每个字节带可编程写保护的EEPROM中) 1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位,每个字节带可编程写保护,2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM,具有可编程写保护对于每一个字节,两个字节可编程保障法024 × 8位,每个字节带可编程写保护,2字节可编程安全密码的EEPROM中)
|
GTM, Corp. Integrated Silicon Solution, Inc.
|
UPD2101AL-4 |
1024 BIT (256 X 4) STATIC MOS RAM WITH SEPARATE I/O
|
NEC Corp.
|
AM29F200AT-55EC AM29F200AT-55EE AM29F200AT-55EI AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 120 ns, PDSO44 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PDSO44 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO44 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 150 ns, PDSO44 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 55 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区闪存 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 150 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区闪存 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
AM29LV200B AM29LV200BB-120EC AM29LV200BB-120ECB AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 80 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存
|
http:// AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
MC12038AD MC12038AP |
MECL PLL COMPONENTS 27/128, 55/256 DUAL MODULUS PRESCALER MECL PLL COMPONENTS 127/128 / 255/256 DUAL MODULUS PRESCALER
|
Motorola
|